t4 - lds - 0220 - 1, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 1 of 5 1n821ur-1 C 1n829aur-1 available on commercial versions 6.2 & 6.55 volt zener r eference d iodes qualified per mil - prf - 19500/159 * qualified levels : jan, jantx, jantxv and jans (available on some part numbers ) description the 1n821ur -1 C 1n829aur - 1 series of surface mount temperature compensated r eference d iodes provides both 6.2 v and 6.55 v nominal voltages and temperature coefficients as low as 0.0005 %/ o c at a zener test current of 7.5 ma. these glass surface mount do - 213aa (melf) reference diodes are optionally available as rohs compliant for commercial applications. this type of bonded zener package construction is also available in jan, jantx, jantxv and jans military qualifications (rohs compliant option not applicable). microsemi also offers other zener reference diode products for a variety of voltages up to 200 v. do - 213aa package also available in : do - 35 (do - 204ah) ( axial - leaded ) 1n821 -1 C 1n829 -1 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 1n 821 C 1n829 series . ? zener impedance values of 10 ohms and 15 ohms are available . ? reference voltage selection of 6.2 v & 6.55 v +/ - 5% with further tight tolerance options on commercial at lower voltage. (excludes 1n826 and 1n828.) ? temperature compensated . ? internal metallurgical bond . ? double plug construction. ? * jan, jantx, jantxv and jans qualification per mil - prf - 19500/159 available on 1n821 -1 , 823 - 1 , 825 -1 , 827 -1 and 829 -1. ? rohs compliant versions available (commercial grade only) . applications / benefits ? pro vides minimal voltage changes over a broad temperature range. ? for instrumentation and other circuit designs requiring a stable voltage reference. ? maximum temperature coefficient selections available from 0.01 %/oc to 0.0005 %/oc. ? tight reference voltage tolerances of 1%, 2%, 3%, etc , available on commercial with center nominal value of 6.2 v by special request . (excludes 1n826 and 1n828.) ? small surface - mount footprint . ? non - sensitive to esd per mil - std - 750 m ethod 1020. ? typical low capacitance of 100 pf or less. maximum ratings @ t a = +25 oc unless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 55 to +175 o c power dissipation (1) p d 500 mw maximum zener current i zm 70 ma solder pad temperatures at 10 s t sp 260 o c notes : 1. @ t l = 25 o c and maximum current i zm of 70 ma. for optimum voltage - temperature stability, i z = 7.5 ma (less than 50 mw in dissipated power). derate at 3.33 mw/ o c above t a = +25 o c . downloaded from: http:///
t4 - lds - 0220 - 1, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 2 of 5 1n821ur-1 C 1n829aur-1 mechanical and packaging ? case: hermetically sealed glass ca se. do - 213aa package. ? terminals: tin -l ead (military) or rohs compliant annealed matte -t in plating (commercial grade only) solderable per mil - std - 750, method 2026. ? marking: cathode band (except double anode 1n822 and 1n824). ? polarity: reference diode to be operated with the banded end positive with respect to the opposite end. ? mounting surface selection: the axial coefficient of expansion (coe) o f this d evice is a pproximately +6ppm/c. the coe of the m ounting s urface s ystem s hould b e s elected t o p rovi de a s uitable m atch w ith t his d evice. ? tape & reel option: standard per eia - 481 - b with 12 mm tape (add tr suffix to part number). consult factory for quantities. ? weight: approximately 0.04 grams. ? see p ackage d imension s on last page. part nomenclature applicable to: jan, jantx, jantxv and jans of 1n821, 1n823, 1n825, 1n827, and 1n829 only : jan 1n821 ur -1 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial metallurgical bond surface mount package jedec type number (see electrical characteristics table) applicable to: commercial 1n821, 1n823, 1n825, 1n827, and 1n829 only : 1n821 a ur -1 (e3) jedec type number (s ee electrical characteristics t able ) zener impedance a = 10 ohms blank = 15 ohms rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant surface mount package metallurgical bond applicable to: 1n822, 1n824 , 1n826 and 1n828 only : 1n822 ur -1 (e3) jedec type number (s ee electrical characteristics t able ) surface mount package rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant metallurgical bond downloaded from: http:///
t4 - lds - 0220 - 1, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 3 of 5 1n821ur-1 C 1n829aur-1 symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its break down region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. electrical characteristics @ 25 o c (unless otherwise specified) jedec type number zen er voltage v z @ i zt (note 3) zener test current i zt maximum zener impedance z zt @ i zt (note 1) maximum reverse current i r @ 3 v voltage temperature stability ( ? v zt max) - 55 o c to +100 o c (note 2 and 3) effective temperature coefficient vz v olts ma ohms a mv % / o c 1n821ur -1 1n821aur -1 5.89 - 6.5 1 5.89 - 6.5 1 7.5 7.5 15 10 2 2 96 96 0.01 0.01 1n822ur -1? 5.9 - 6.5 7.5 15 2 96 0.01 1n823ur -1 1n823aur -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 48 48 0.005 0.005 1n824ur -1? 5.9 - 6.5 7.5 15 2 48 0.005 1n825ur -1 1n825aur -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 19 19 0.002 0.002 1n826ur -1 6.2 - 6.9 7.5 15 2 20 0.002 1n827ur -1 1n827aur -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 9 9 0.001 0.001 1n828ur -1 6.2 - 6.9 7.5 15 2 10 0.001 1n829ur -1 1n829aur -1 5.89 - 6.51 5.89 - 6.51 7.5 7.5 15 10 2 2 5 5 0.0005 0.0005 ? double anode: electrical specifications apply under both bias polarities. notes: 1. zener impedance is measured by superimposing 0.75 ma ac rms on 7.5 ma dc @ 25 o c. 2. the maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mv change at any discrete temperature between the established limits. 3. voltage measurements to be performed 15 seconds after application of dc current. 4. this product series has been previously identified as cdll821 thru cdll829a - 1. this alternate number may still be in use. downloaded from: http:///
t4 - lds - 0220 - 1, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 4 of 5 1n821ur-1 C 1n829aur-1 graphs operating current i zt (ma) figure 1 typical zener impedance vs operating current i z C operating current (ma) i z C operating current (ma) figure 2 figure 3 typical change of temperature coefficient typical change of zener voltage with change in operating current with change in operating current the curve shown in figure 2 is typical of the diode series and greatly simplifies t he estimation of the temperature coefficient (tc) when the diode is operated at currents other than 7.5 ma. example: a diode in this series is operated at a current of 7.5 ma and has specified temperature coefficient (tc) limits of +/ - 0. 005 %/ o c . to obtain the typical temperature coefficient limits for this same diode operated at a curre nt of 6.0ma, the new tc limits (%/ o c ) can be estimated using the graph in figure 2. at a test current of 6.0ma the change in temperature coefficient (tc ) is approximately C 0.0006 %/ o c . the algebraic sum of +/ - 0.005 % o c and C 0.0006 %/ o c gives the new estimated limits of +0.0044 %/ o c and - 0.0056 %/ o c. change in temperature coefficient (%/ o c) this curve in figure 3 illustrates the change of diode voltage arising from the effect of impedance. it is in effect an exploded view of the zener operating region of the i - v characteristic. in conjunction with figure 2, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. ? v z C change in zener voltage (mv) zener impedance i zt (ohms) downloaded from: http:///
t4 - lds - 0220 - 1, rev. 2 (7/ 29 /13) ?201 3 microsemi corporation page 5 of 5 1n821ur-1 C 1n829aur-1 package dimensions sy mbol dimensions inch millimeters min max min max bd 0 .063 0 .067 1 .60 1.70 bl 0 .130 0 .146 3.30 3.71 ect 0 .016 0 .022 0.41 0.56 s 0 .001 min 0.03 min no tes: 1. dimensions are in inches. 2. millimeters are given for information onl y. 3. in accordance w ith asme y14.5m, diameters are equivalent to x s y mbolog y. pad layout i nch mm a 0 .200 5.08 b 0 .055 1.40 c 0 .080 2.03 downloaded from: http:///
|
